Analysis of thermal stress damage in single-crystal silicon induced by 1064-nm long-pulse laser

Yanbei Chen; Jian Lu; Xiaowu Ni

doi:10.1117/12.757773

8 January 2008 Analysis of thermal stress damage in single-crystal silicon induced by 1064nm long pulse laser

Yanbei Chen, Jian Lu, Xiaowu Ni

Proceedings Volume 6835, Infrared Materials, Devices, and Applications; 68351X (2008) https://doi.org/10.1117/12.757773
Event: Photonics Asia 2007, 2007, Beijing, China

Abstract

Single-crystal silicon is an excellent infrared window material and is often used as light filter, infrared window and substrate material in an optical system. At the same time single-crystal silicon is typical brittle material. Therefore thermal stress damage has possibly occurred before melting when it is irradiated by laser. In order to investigate on the laser-induced thermal stress damage problem in single-crystal silicon, a spatial axisymmetric finite element model is established to solve the thermal stress problem which a single-crystal silicon substrate is heated by a Nd:YAG laser beam with wavelength of 1064nm and pulse width of the millisecond order. After the temperature and stress fields are obtained, the relevant analysis is carried out. The calculational results are in reasonable agreement with the reported experiment results. It found that the stress value in the central zone of the laser spot exceeds the fracture strength of single-crystal silicon, which can explain the damage of cleavage fracture of the material.

Citation Download Citation

Yanbei Chen, Jian Lu, and Xiaowu Ni "Analysis of thermal stress damage in single-crystal silicon induced by 1064nm long pulse laser", Proc. SPIE 6835, Infrared Materials, Devices, and Applications, 68351X (8 January 2008); https://doi.org/10.1117/12.757773

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