Effects of pretreatment for sapphire on GaN optical propertities

Dongsheng Peng; Yuchun Feng; Ruisheng Zheng; Hanben Niu

doi:10.1117/12.756253

20 November 2007 Effects of pretreatment for sapphire on GaN optical propertities

Dongsheng Peng, Yuchun Feng, Ruisheng Zheng, Hanben Niu

Proceedings Volume 6828, Light-Emitting Diode Materials and Devices II; 68280W (2007) https://doi.org/10.1117/12.756253
Event: Photonics Asia 2007, 2007, Beijing, China

Abstract

High quality GaN films with low dislocation density have been grown on sapphire substrate which is pretreated by a new and simple method in order to overcome those problems existing in the conventional ELO technique. Etch pits on sapphire substrate surface are formed after surface treating. GaN films have been grown by LP-MOCVD on the sapphire substrate, which a half of it is treated by chemical etch. Both the thickness and dispersion of the refractive index of GaN films are obtained by spectroscopic ellipsometry. With the dispersion of the refractive index, the transmission spectrum of GaN is studied and the thickness of GaN epilayer is calculated. The two values of the thickness obtained by these two different methods are in good agreement. The epilayer grown on the surface treated sapphire substrate exhibits superior optical properties and crystal properties, in which the yellow luminescence is nearly invisible in the photoluminescence spectrum, the higher transmission ratio and the greater modulation depth can be shown in the transmission spectrum.

Citation Download Citation

Dongsheng Peng, Yuchun Feng, Ruisheng Zheng, and Hanben Niu "Effects of pretreatment for sapphire on GaN optical propertities", Proc. SPIE 6828, Light-Emitting Diode Materials and Devices II, 68280W (20 November 2007); https://doi.org/10.1117/12.756253

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