High-efficiency active opto-electronic devices

G. D. Shen; Y. X. Chen; B. F. Cui; J. J. Li; J. Han; B.L. Guan; X. Guo; W. J. Jiang; W. Gao; J. Deng; C. Xu

doi:10.1117/12.784829

14 January 2008 High-efficiency active opto-electronic devices

G. D. Shen, Y. X. Chen, B. F. Cui, J. J. Li, J. Han, B.L. Guan, X. Guo, W. J. Jiang, W. Gao, J. Deng, C. Xu

Proceedings Volume 6824, Semiconductor Lasers and Applications III; 68240D (2008) https://doi.org/10.1117/12.784829
Event: Photonics Asia 2007, 2007, Beijing, China

Abstract

The problems and fabrication difficulties for the conventional semiconductor LDs (laser diodes), VCSELs (vertical cavity surface emitting lasers) and LEDs (light emitting diodes) were analyzed. The high quantum efficiency transverse optical coupled LDs, longitudinal optical coupled VCSELs with multi-active region structure and high internal and external quantum efficiency high brightness LEDs with small size were proposed and fabricated; they have showed the excellence performance. The external and differential quantum efficiency are 3.3 and 3.8 W/A, and the output light power is as high as ~ 6.6W when the injecting current equals 2A for the four active regions 980nm strained InGaAs/GaAs QW lasers; the highest pulse and CW light power output are 13.1mW and 9mW of the 980nm longitudinal optical coupled VCSELs; the on-axis luminous intensity of the tunneling regenerated multi-active region LEDs will increase linearly with the number of active regions approximately. The on-axis luminous intensity for the high external quantum efficiency 622nm LEDs with small size 8milx×8mil is as high as 150-200mcd at 20mA injecting current.

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G. D. Shen, Y. X. Chen, B. F. Cui, J. J. Li, J. Han, B.L. Guan, X. Guo, W. J. Jiang, W. Gao, J. Deng, and C. Xu "High-efficiency active opto-electronic devices", Proc. SPIE 6824, Semiconductor Lasers and Applications III, 68240D (14 January 2008); https://doi.org/10.1117/12.784829

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