Nanometric material removal using the electrokinetic phenomenon

Leo Cheng Seng; Travis Lee Blackburn; Sum Huan Ng; Yang Chun; David Lee Butler; Steven Danyluk

doi:10.1117/12.769686

11 January 2008 Nanometric material removal using the electrokinetic phenomenon

Leo Cheng Seng, Travis Lee Blackburn, Sum Huan Ng, Yang Chun, David Lee Butler, Steven Danyluk

Proceedings Volume 6800, Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV; 680028 (2008) https://doi.org/10.1117/12.769686
Event: SPIE Microelectronics, MEMS, and Nanotechnology, 2007, Canberra, ACT, Australia

Abstract

Material removal at the sub-micron level has been a topic of interest in the past few years, particularly with respect to the fabrication of miniaturized devices. While numerous techniques have been developed and refined from their larger mesoscale counterparts (e.g. microEDM, micromilling), most have inherent limitations such as tool dimensions restricting the minimum feature which can be produced. In this work, we are proposing a novel technique of using the electrokinetic phenomenon for precise material removal at rates in the order of nanometers/min. An AC electric field with a DC offset is applied to a flowing fluid containing suspended particles which will then collide with the workpiece material causing material wear and tear and thus material removal. Results showed that the technique was feasible in achieving sub-micron material removal in micro-channels up to a depth of several hundred nanometers. With no chemicals involved in the process, the technique offers the further attraction of being a benign nano-manufacturing process with potential usage in the biochip and microfluidics areas.

Citation Download Citation

Leo Cheng Seng, Travis Lee Blackburn, Sum Huan Ng, Yang Chun, David Lee Butler, and Steven Danyluk "Nanometric material removal using the electrokinetic phenomenon", Proc. SPIE 6800, Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV, 680028 (11 January 2008); https://doi.org/10.1117/12.769686

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