Moving from ultrafast VECSELs to MIXSELs: a new class of ultrafast semiconductor lasers

T. Südmeyer; D. J. H. C. Maas; A.-R. Bellancourt; B. Rudin; M. Golling; H. J. Unold; U. Keller

doi:10.1117/12.754533

19 November 2007 Moving from ultrafast VECSELs to MIXSELs: a new class of ultrafast semiconductor lasers

T. Südmeyer, D. J. H. C. Maas, A.-R. Bellancourt, B. Rudin, M. Golling, H. J. Unold, U. Keller

Author Affiliations +

Proceedings Volume 6782, Optoelectronic Materials and Devices II; 67820N (2007) https://doi.org/10.1117/12.754533
Event: Asia-Pacific Optical Communications, 2007, Wuhan, China

Abstract

We demonstrate wafer-scale integration of a saturable absorber in a surface emitting semiconductor laser. Vertical external cavity surface-emitting lasers (VECSELs) have high quality circular output beams, 2D-array scalability, and high average power. To date, ultrafast VECSELs required a folded cavity with a separate saturable absorber device for passive modelocking. In the result presented here, we integrate the saturable absorber into the same semiconductor wafer, optimize its performance for integration with quantum dots and demonstrate stable passive modelocking in a simple straight external cavity which allows for a fully monolithically wafer-integrated structure to reduce cost and improve ease of mass production. We refer to this class of devices as the modelocked integrated external-cavity surface emitting laser (MIXSEL). Such devices would be ideally suited for many applications where the current ultrafast laser technology is considered to be too bulky and expensive.

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T. Südmeyer, D. J. H. C. Maas, A.-R. Bellancourt, B. Rudin, M. Golling, H. J. Unold, and U. Keller "Moving from ultrafast VECSELs to MIXSELs: a new class of ultrafast semiconductor lasers", Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67820N (19 November 2007); https://doi.org/10.1117/12.754533

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