Ge nanostructures doped silica-on-silicon waveguides

Haiyan Ou; Troels Peter Rørdam; Karsten Rottwitt; Flemming Grumsen; Andy Horsewell; Rolf W. Berg; Peixiong Shi; Lionel Cervera Gontard; Rafal E. Dunin-Borkowski

doi:10.1117/12.754562

26 November 2007 Ge nanostructures doped silica-on-silicon waveguides

Haiyan Ou, Troels Peter Rørdam, Karsten Rottwitt, Flemming Grumsen, Andy Horsewell, Rolf W. Berg, Peixiong Shi, Lionel Cervera Gontard, Rafal E. Dunin-Borkowski

Author Affiliations +

Proceedings Volume 6782, Optoelectronic Materials and Devices II; 678204 (2007) https://doi.org/10.1117/12.754562
Event: Asia-Pacific Optical Communications, 2007, Wuhan, China

Abstract

Ge nanostructures embedded in silica matrix are emerging as a promising material for new generation devices due to the unique electric and photonic properties. In this paper, Ge nanoclusters and nanocylinders with Ge shell were successfully formed by the high energy electron irradiation in the PECVD deposited glass. In addition, large area Ge nanoclusters were also created by heat-treatment of PECVD deposited glass film. These nanostructures were characterized in terms of size, composition, distribution and crystalline state by using TEM, HRTEM, EDS, SEM, Raman spectroscopy, and SIMS. Waveguides doped with Ge nanoclusters were fabricated and their absorption has been characterized in a wavelength range from 500nm to 1700nm.

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Haiyan Ou, Troels Peter Rørdam, Karsten Rottwitt, Flemming Grumsen, Andy Horsewell, Rolf W. Berg, Peixiong Shi, Lionel Cervera Gontard, and Rafal E. Dunin-Borkowski "Ge nanostructures doped silica-on-silicon waveguides", Proc. SPIE 6782, Optoelectronic Materials and Devices II, 678204 (26 November 2007); https://doi.org/10.1117/12.754562

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