Inverse lithography technology (ILT): keep the balance between SRAF and MRC at 45 and 32 nm

Linyong Pang; Yong Liu; Thuc Dam; Kresimir Mihic; Thomas Cecil; Dan Abrams

doi:10.1117/12.754568

30 October 2007 Inverse lithography technology (ILT): keep the balance between SRAF and MRC at 45 and 32 nm

Linyong Pang, Yong Liu, Thuc Dam, Kresimir Mihic, Thomas Cecil, Dan Abrams

Proceedings Volume 6730, Photomask Technology 2007; 673052 (2007) https://doi.org/10.1117/12.754568
Event: SPIE Photomask Technology, 2007, Monterey, California, United States

Abstract

In this paper, we present the Luminescent's ILT approach that can rapidly solve for the optimal photomask design. We will discuss the latest development of ILT at Luminescent in the areas of sub-resolution assist feature (SRAF) generation and optimization to improve process window, and mask rule compliance (MRC). Results collected internally and from customers demonstrate that ILT is not only an R&D tool, but also a tool quickly maturing for production qualification at advanced technology nodes. By enforcing the proper constraints while optimizing the masks, ILT can improve process windows while maintaining mask costs at a reasonable level.

Citation Download Citation

Linyong Pang, Yong Liu, Thuc Dam, Kresimir Mihic, Thomas Cecil, and Dan Abrams "Inverse lithography technology (ILT): keep the balance between SRAF and MRC at 45 and 32 nm", Proc. SPIE 6730, Photomask Technology 2007, 673052 (30 October 2007); https://doi.org/10.1117/12.754568

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