Paper
30 October 2007 New method of contour-based mask-shape compiler
Ryoichi Matsuoka, Akiyuki Sugiyama, Akira Onizawa, Hidetoshi Sato, Yasutaka Toyoda
Author Affiliations +
Abstract
We have developed a new method of accurately profiling a mask shape by utilizing a Mask CD-SEM. The method is intended to realize high accuracy, stability and reproducibility of the Mask CD-SEM adopting an edge detection algorithm as the key technology used in CD-SEM for high accuracy CD measurement. In comparison with a conventional image processing method for contour profiling, it is possible to create the profiles with much higher accuracy which is comparable with CD-SEM for semiconductor device CD measurement. In this report, we will introduce the algorithm in general, the experimental results and the application in practice. As shrinkage of design rule for semiconductor device has further advanced, an aggressive OPC (Optical Proximity Correction) is indispensable in RET (Resolution Enhancement Technology). From the view point of DFM (Design for Manufacturability), a dramatic increase of data processing cost for advanced MDP (Mask Data Preparation) for instance and surge of mask making cost have become a big concern to the device manufacturers. In a sense, it is a trade-off between the high accuracy RET and the mask production cost, while it gives a significant impact on the semiconductor market centered around the mask business. To cope with the problem, we propose the best method for a DFM solution in which two dimensional data are extracted for an error free practical simulation by precise reproduction of a real mask shape in addition to the mask data simulation. The flow centering around the design data is fully automated and provides an environment where optimization and verification for fully automated model calibration with much less error is available. It also allows complete consolidation of input and output functions with an EDA system by constructing a design data oriented system structure. This method therefore is regarded as a strategic DFM approach in the semiconductor metrology.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ryoichi Matsuoka, Akiyuki Sugiyama, Akira Onizawa, Hidetoshi Sato, and Yasutaka Toyoda "New method of contour-based mask-shape compiler", Proc. SPIE 6730, Photomask Technology 2007, 67300M (30 October 2007); https://doi.org/10.1117/12.746559
Lens.org Logo
CITATIONS
Cited by 3 scholarly publications and 1 patent.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Photomasks

Optical proximity correction

Edge detection

Computer aided design

Scanning electron microscopy

Profiling

Semiconductors

RELATED CONTENT

Inverse lithography technology at chip scale
Proceedings of SPIE (March 21 2006)
Integration of mask and silicon metrology in DFM
Proceedings of SPIE (March 12 2009)
Evaluation of OPC efficacy
Proceedings of SPIE (June 07 1996)
New method of 2-dimensional metrology using mask contouring
Proceedings of SPIE (October 17 2008)

Back to Top