Particle size study of diazonaphthoquinone/novolak

Ping Linda Zhang; Hai Liang Yu; Song Hu; Zhong Yuan Jin; Le Wang; Li Yu Liu; Lu Chuan Zhang; Yong Yang

doi:10.1117/12.782960

21 November 2007 Particle size study of diazonaphthoquinone/novolak

Ping Linda Zhang, Hai Liang Yu, Song Hu, Zhong Yuan Jin, Le Wang, Li Yu Liu, Lu Chuan Zhang, Yong Yang

Proceedings Volume 6724, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems; 67241S (2007) https://doi.org/10.1117/12.782960
Event: 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Large Mirrors and Telescopes, 2007, Chengdu, China

Abstract

With decreasing CD in semiconductor industry, the ability to detect smaller resist particles on wafers after photolithography process becomes increasingly important for the advanced photolithography processes. It is important to be able to detect the resist defect for the advanced photolithography processes. To be able to measure the resist, defect after development process can give the indication and the early warning of the photoresist defect on the wafer. The diazoquinone/novolak resist particles were collected after the development of several lots of wafers, while the wafer critical dimension is 2μm. The particle size and its distribution after development process were obtained. The resist particles were negatively stained before TEM. The TEM figures and the measurement data of the resist particle diameters were reported. The size measurement data of TEM figures of diazoquinone/novolak resist particles after photolithography development process was analyzed. The particle size mainly has dual separate distribution peaks: >85% of particles have the diameters distributed around ~23 nm and 15% of bigger particles around 220 nm. Because of the unique role of DNQ, which is both the photo-sensitizer and the development inhibitor before exposure, the correlation of resist particle size with respect to the developer concentration, the size of the radius of gyration, the "photosensitizing center" and the "development center" is speculated. Generally the particle size distribution is mainly correlated to the developer concentration, polymer macromolecular weight and the polymer / PAC ratio.

Citation Download Citation

Ping Linda Zhang, Hai Liang Yu, Song Hu, Zhong Yuan Jin, Le Wang, Li Yu Liu, Lu Chuan Zhang, and Yong Yang "Particle size study of diazonaphthoquinone/novolak", Proc. SPIE 6724, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems, 67241S (21 November 2007); https://doi.org/10.1117/12.782960

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KEYWORDS

Particles

Semiconducting wafers

Transmission electron microscopy

Photoresist developing

Photoresist processing

Optical lithography

Polymers

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