Optical damage threshold of silicon for ultrafast infrared pulses

Benjamin M. Cowan

doi:10.1117/12.753720

18 December 2007 Optical damage threshold of silicon for ultrafast infrared pulses

Benjamin M. Cowan

Proceedings Volume 6720, Laser-Induced Damage in Optical Materials: 2007; 67201M (2007) https://doi.org/10.1117/12.753720
Event: Boulder Damage Symposium XXXIX: Annual Symposium on Optical Materials for High Power Lasers, 2007, Boulder, Colorado, United States

Abstract

We present measurements of the optical damage threshold of crystalline silicon in air for ultrafast pulses in the near infrared. The wavelengths tested span a range from the telecommunications band at 1550 nm, extending to 2260 nm. We discuss the motivation for the measurements and give theoretical context. We then describe the experimental setup, diagnostics, and procedure. The results show a breakdown threshold of 0.2 J/cm² at 1550 nm and 1.06 ps FWHM pulse duration, and a weak dependence on wavelength.

Citation Download Citation

Benjamin M. Cowan "Optical damage threshold of silicon for ultrafast infrared pulses", Proc. SPIE 6720, Laser-Induced Damage in Optical Materials: 2007, 67201M (18 December 2007); https://doi.org/10.1117/12.753720

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