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Recently, some of the authors showed that it is possible to grow CZT crystals by the boron oxide encapsulated vertical
Bridgman method. The most important feature of the technique is that the crystal, during the growth, is fully
encapsulated by a thin layer of liquid boron oxide, so that the crystal-crucible contact is prevented. The stress of the
crucible to the crystal is strongly reduced also during the cooling, because the boron oxide layer is molten down to about
500°C. A number of detectors have been prepared out of these crystals. The transport properties (μτ product) have been
studied by photoconductivity measurements as well as by determining the response to hard X-ray irradiation. The
transport properties have been studied as a function of the indium content and of the position of the wafer which the
detector was cut out.
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M. Pavesi, M. Zanichelli, E. Gombia, R. Mosca, L. Marchini, M. Zha, A. Zappettini, E. Caroli, N. Auricchio, B. Negri, "CZT X-ray detectors obtained by the boron encapsulated vertical Bridgman method," Proc. SPIE 6706, Hard X-Ray and Gamma-Ray Detector Physics IX, 67060X (21 September 2007); https://doi.org/10.1117/12.734017