Paper
21 September 2007 Evaluation of 0.5-mm thick double-sided silicon strip detector for Compton telescope
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Abstract
Double-sided silicon strip detector (DSSD) is a key component to construct the next generation Compton telescope for the high-sensitivity observation in the energy region from several hundred keV to MeV. The concept of Compton camera we consider is using DSSD for scatterer, and high-stopping CdTe pixel detector for absorber. As the scatterer, DSSD has advantages of smaller band gap, higher efficiency of scattering, smaller Doppler broadening, good response time, and smaller number of readout channels. We have developed and confirmed that 0.3 mm-thick DSSD has enough performance. As a next step, in order to obtain more efficiency of higher energy gamma-rays, we developed newly designed DSSD which increase in thickness to 0.5 mm. We measured the basic properties of 0.5 mm thick DSSD, in terms of leakage current, capacitances, and noise characteristics. They can be full-depleted around 200 V, and we obtained the energy resolution of 1.3 keV (FWHM) for 60 keV at -10 °C from one p-side strip. We also set up the newly developed read-out system which is based on technology of operating ASICs on floating ground, and performed 64 ch read-out on one side.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hajimu Yasuda, Yasushi Fukazawa, Shin'ichiro Takeda, Shin Watanabe, Tadayuki Takahashi, Kazuhiro Nakazawa, Hiroyasu Tajima, and Takaaki Tanaka "Evaluation of 0.5-mm thick double-sided silicon strip detector for Compton telescope", Proc. SPIE 6706, Hard X-Ray and Gamma-Ray Detector Physics IX, 67060T (21 September 2007); https://doi.org/10.1117/12.735147
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KEYWORDS
Sensors

Gamma radiation

Silicon

Capacitance

Telescopes

Americium

Energy efficiency

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