Low-damage wet chemical etching for GaN-based visible-blind p-i-n detector

Jie Chen; Jintong Xu; Ling Wang; Xiangyang Li; Yan Zhang

doi:10.1117/12.790833

3 March 2008 Low-damage wet chemical etching for GaN-based visible-blind p-i-n detector

Jie Chen, Jintong Xu, Ling Wang, Xiangyang Li, Yan Zhang

Proceedings Volume 6621, International Symposium on Photoelectronic Detection and Imaging 2007: Photoelectronic Imaging and Detection; 66211D (2008) https://doi.org/10.1117/12.790833
Event: International Symposium on Photoelectronic Detection and Imaging: Technology and Applications 2007, 2007, Beijing, China

Abstract

We have investigated wet chemical etching process of n⁺-type Al_0.33Ga_0.67N in 20% (by weight) aqueous KOH solutions at 106°C after Ar⁺ ion beam dry etching treatment. Scanning electron microscope and Auger electron spectroscopy were employed to characterize the surface morphology and stoichiometry with and without wet chemical etching. It is obvious that dry etching damages were reduced after wet chemical etching. We also fabricated two sets of visible-blind p-i-n detectors for comparison. I-V characterization indicated that the average leakage current of the wet etching treated detectors was lower than that of the detectors without treatment by about one order of magnitude. When the reverse bias was -5 V, the leakage currents of wet etching treated devices varied from -2.16×10^-9 to -6.26×10^-9 A and those of untreated detectors varied from -2.68×10^-8 to -3.49×10^-8 A. The peak responsivity at 365 nm was also tremendously enhanced by means of wet chemical etching treatment. It was 0.10 and 0.03 A/W under back illumination, with and without wet chemical treatment, respectively. When the detector was under front illumination, the result was 0.05 and 0.02 A/W, respectively.

Citation Download Citation

Jie Chen, Jintong Xu, Ling Wang, Xiangyang Li, and Yan Zhang "Low-damage wet chemical etching for GaN-based visible-blind p-i-n detector", Proc. SPIE 6621, International Symposium on Photoelectronic Detection and Imaging 2007: Photoelectronic Imaging and Detection, 66211D (3 March 2008); https://doi.org/10.1117/12.790833

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available