Numerical modeling of electron noise in nanoscale Si devices

Christoph Jungemann

doi:10.1117/12.724399

11 June 2007 Numerical modeling of electron noise in nanoscale Si devices

Christoph Jungemann

Proceedings Volume 6600, Noise and Fluctuations in Circuits, Devices, and Materials; 66001E (2007) https://doi.org/10.1117/12.724399
Event: SPIE Fourth International Symposium on Fluctuations and Noise, 2007, Florence, Italy

Abstract

A deterministic solver for the Langevin Boltzmann equation is presented, which is based on a spherical harmonics expansion, box integration, and a maximum entropy dissipation principle. The numerical properties of this method are very similar to the classical approaches (drift-diffusion or hydrodynamic models), and the same numerical methods can be used (ac analysis, adjoint method, harmonic balance, etc). Since the equations can be solved directly in the frequency domain, the full frequency range down to zero frequency is accessible. In addition, rare events can be simulated without excessive CPU times. This is demonstrated for a silicon NPN BJT. Not only the terminal current noise is calculated, but also the spatial origin of noise and the corresponding Green's functions.

Citation Download Citation

Christoph Jungemann "Numerical modeling of electron noise in nanoscale Si devices", Proc. SPIE 6600, Noise and Fluctuations in Circuits, Devices, and Materials, 66001E (11 June 2007); https://doi.org/10.1117/12.724399

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