Paper
18 June 2007 Optical switch using InP optical wire technology
Marie Lesecq, Maxime Beaugeois, Sophie Maricot, Christophe Boyaval, Christiane Legrand, Marc François, Michel Muller, Francis Mollot, Mohammed Bouazaoui, Jean-Pierre Vilcot
Author Affiliations +
Proceedings Volume 6593, Photonic Materials, Devices, and Applications II; 659305 (2007) https://doi.org/10.1117/12.721659
Event: Microtechnologies for the New Millennium, 2007, Maspalomas, Gran Canaria, Spain
Abstract
We report on a new type of optical switch based on submicron structures and present the results obtained on the first nanophotonics based optical switch. First, we present results obtained on passive components that are required in an optical switch or switching matrix: straight waveguides, bend waveguides and Y junctions. Measured propagation loss are lower than 1dB/mm for waveguides wider than 1&mgr;m. Excess bending loss is 1dB for curvature radius as small as 30&mgr;m. Loss due to branching angle in a Y junction is 2dB for angle as wide as 20°. Optical switch design is based on two dissymmetric DOS like active junctions; theoretical crosstalk is 28dB, 14dB for each junction. We present the technological process to realize this active component. Finally, we report on the first characterization of a single Y junction a crosstalk of 11dB.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Marie Lesecq, Maxime Beaugeois, Sophie Maricot, Christophe Boyaval, Christiane Legrand, Marc François, Michel Muller, Francis Mollot, Mohammed Bouazaoui, and Jean-Pierre Vilcot "Optical switch using InP optical wire technology", Proc. SPIE 6593, Photonic Materials, Devices, and Applications II, 659305 (18 June 2007); https://doi.org/10.1117/12.721659
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Cited by 2 scholarly publications.
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KEYWORDS
Waveguides

Electrodes

Optical switching

Near field optics

Etching

Switches

Wave propagation

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