Simulation of the combined effects of polymer size, acid diffusion length, and EUV secondary electron blur on resist line-edge roughness

D. Drygiannakis; M. D. Nijkerk; G. P. Patsis; G. Kokkoris; I. Raptis; L. H. A. Leunissen; E. Gogolides

doi:10.1117/12.708847

22 March 2007 Simulation of the combined effects of polymer size, acid diffusion length, and EUV secondary electron blur on resist line-edge roughness

D. Drygiannakis, M. D. Nijkerk, G. P. Patsis, G. Kokkoris, I. Raptis, L. H. A. Leunissen, E. Gogolides

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Proceedings Volume 6519, Advances in Resist Materials and Processing Technology XXIV; 65193T (2007) https://doi.org/10.1117/12.708847
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

Device shrinking combined with material manipulation under various process conditions becomes a difficult task if specific optimization conditions should be met. Nanolithography is limited by effects as line-edge and line-width roughness (LER and LWR respectively) and secondary electron blur (SEB). Simulation studies could show the direction of solving design for manufacturing problems. In the current article a simulation methodology is presented, based on the concept of stochastic modeling of exposure, material, and process aspects of lithography and pattern transfer with plasma etching in order to get information about the evolution of critical dimensions (CD), LER and LWR in the layout. The study reveals that under certain process conditions, the effect of acid diffusion on LER is more important than the one of SEB, although both deal with blurring, because acid diffusion is supposed to extend in longer radius. However, when resists of low degree of polymerization are used, SEB should also be considered explicitly since the deteriorations from blurring on both LER and CD are enhanced due to the graining nature of the material. In any case, etching smoothing effects of high frequency LER components should be considered in terms of CD loss.

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D. Drygiannakis, M. D. Nijkerk, G. P. Patsis, G. Kokkoris, I. Raptis, L. H. A. Leunissen, and E. Gogolides "Simulation of the combined effects of polymer size, acid diffusion length, and EUV secondary electron blur on resist line-edge roughness", Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65193T (22 March 2007); https://doi.org/10.1117/12.708847

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