Fundamental limits to EUV photoresist

Gregg M. Gallatin; Patrick Naulleau; Robert Brainard

doi:10.1117/12.712346

22 March 2007 Fundamental limits to EUV photoresist

Gregg M. Gallatin, Patrick Naulleau, Robert Brainard

Proceedings Volume 6519, Advances in Resist Materials and Processing Technology XXIV; 651911 (2007) https://doi.org/10.1117/12.712346
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

Recent experimental results indicate that current resists lack the ability to simultaneously meet the 2005 International Roadmap for Semiconductors (ITRS) goals for Resolution, Line Edge Roughness (LER) and Sensitivity (RLS). This RLS tradeoff has also been demonstrated through modeling work. Here we use a model to explore the impact on the RLS tradeoff of anisotropic acid diffusion and increased quantum yield. We show that both these effects can significantly improve the RLS tradeoff.

Citation Download Citation

Gregg M. Gallatin, Patrick Naulleau, and Robert Brainard "Fundamental limits to EUV photoresist", Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 651911 (22 March 2007); https://doi.org/10.1117/12.712346

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available