Novel high-index resists for 193-nm immersion lithography and beyond

Idriss Blakey; Lan Chen; Bronwin Dargaville; Heping Liu; Andrew Whittaker; Will Conley; Emil Piscani; Georgia Rich; Alvina Williams; Paul Zimmerman

doi:10.1117/12.715108

22 March 2007 Novel high-index resists for 193-nm immersion lithography and beyond

Idriss Blakey, Lan Chen, Bronwin Dargaville, Heping Liu, Andrew Whittaker, Will Conley, Emil Piscani, Georgia Rich, Alvina Williams, Paul Zimmerman

Author Affiliations +

Proceedings Volume 6519, Advances in Resist Materials and Processing Technology XXIV; 651909 (2007) https://doi.org/10.1117/12.715108
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

A preliminary Quantitative Structure Property Relationship (QSPR) model for predicting the refractive index of small molecules and polymers at 193 nm is presented. Although at this stage the model is only semiquantitative we have found it useful for screening databases of commercially-available compounds for high refractive index targets to include in our program of synthesis of high refractive index resist polymers. These resists are targeted for use in 2^nd and 3^rd generation 193 nm immersion lithography. Using this methodology a range of targets were identified and synthesized via free radical polymerization. Novel resist polymers were also synthesized via Michael addition polymerization. Preliminary dose to clear experiments identified a number of promising candidates for incorporation into high refractive index resist materials. Furthermore, we have demonstrated imaging of a high index resist using water-based 193 nm immersion lithography.

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Idriss Blakey, Lan Chen, Bronwin Dargaville, Heping Liu, Andrew Whittaker, Will Conley, Emil Piscani, Georgia Rich, Alvina Williams, and Paul Zimmerman "Novel high-index resists for 193-nm immersion lithography and beyond", Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 651909 (22 March 2007); https://doi.org/10.1117/12.715108

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