Absorption of extreme ultraviolet radiation in photoresists

Rashi Garg; Alin Antohe; Gregory Denbeaux

doi:10.1117/12.712427

21 March 2007 Absorption measurments of extreme ultraviolet radiation in photoresists

Rashi Garg, Alin Antohe, Gregory Denbeaux

Proceedings Volume 6517, Emerging Lithographic Technologies XI; 65172O (2007) https://doi.org/10.1117/12.712427
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

Extreme ultraviolet (EUV) lithography is one of the promising techniques for the fabrication of semiconductor features at or below 32 nm. One of the key parameters that can affect photoresist performance is their absorption characteristics at EUV wavelengths. The measurement of the absorption length or absorbance is important because it causes the dose to vary through the thickness of resist which can result in underexposure deeper in the resist. One method for measuring absorption length of a resist is by direct measurement of the transmission of EUV radiation through the resist when it is on a transparent membrane. The results of these measurements show the absorbance for different photoresists currently used for extreme ultraviolet lithography.

Citation Download Citation

Rashi Garg, Alin Antohe, and Gregory Denbeaux "Absorption measurments of extreme ultraviolet radiation in photoresists", Proc. SPIE 6517, Emerging Lithographic Technologies XI, 65172O (21 March 2007); https://doi.org/10.1117/12.712427

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