New requirements for the cleaning of EUV mask blanks

Abbas Rastegar; Sean Eichenlaub; Vivek Kapila; Arun John Kadaksham; Pat Marmillion

doi:10.1117/12.712105

15 March 2007 New requirements for the cleaning of EUV mask blanks

Abbas Rastegar, Sean Eichenlaub, Vivek Kapila, Arun John Kadaksham, Pat Marmillion

Proceedings Volume 6517, Emerging Lithographic Technologies XI; 65171D (2007) https://doi.org/10.1117/12.712105
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

Extreme ultraviolet (EUV) substrates have stringent defect requirements. For the 32 nm node, all particles larger than 26 nm must be removed from the substrate. However, real defects are irregularly shaped and there is no clear dimension for an irregular particle corresponding to 26 nm. Therefore, the sphere equivalent volume diameter (SEVD) for a native defect is used. Using this definition and defect detection measurements, all particles larger than 20 nm must be removed from the substrate. Atomic force microscopy (AFM) imaging and multiple cleaning cycles were used to examine the removal of particles smaller than 50 nm SEVD. Removal of all particles larger than 30 nm was demonstrated. Particles that required multiple cleaning processes for removal were found to be partially embedded. The best cleaning yield can be obtained if the cleaning history of the substrate is known and one can choose the proper cleaning processes that will remove the remaining particles without adding particles. Ag, Au, Al₂O₃, Fe₂O₃, and CuO particles from 30 nm to 200 nm were deposited on quartz surface. It was shown that these deposited defects are much easier to remove than native defects.

Citation Download Citation

Abbas Rastegar, Sean Eichenlaub, Vivek Kapila, Arun John Kadaksham, and Pat Marmillion "New requirements for the cleaning of EUV mask blanks", Proc. SPIE 6517, Emerging Lithographic Technologies XI, 65171D (15 March 2007); https://doi.org/10.1117/12.712105

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