Assessment of pattern position shift for defocusing in EUV lithography

Minoru Sugawara

doi:10.1117/12.713244

15 March 2007 Assessment of pattern position shift for defocusing in EUV lithography

Minoru Sugawara

Proceedings Volume 6517, Emerging Lithographic Technologies XI; 65170X (2007) https://doi.org/10.1117/12.713244
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

In extreme ultraviolet (EUV) lithography, defocusing influences on a pattern position shift due to off-axis incident light on a reflective mask. The pattern position shift with defocusing generates a newly random error source of overlay. Analyzing an exposure and defocus window (ED-window) being merged with a distribution of the pattern position shift reveals that the new error source creates a small impact for the criterion within 10% of the overlay tolerance. Next, 3rd order coma aberration and two modified illumination sources, annular and dipole, are investigated with respect to a pattern position shift which is associated with the asymmetrical phase distribution of diffracted rays. The results show that coma aberrations create no significant impact, and also the modified illumination sources are of little concern whenever semi-dense pitches are forbidden.

Citation Download Citation

Minoru Sugawara "Assessment of pattern position shift for defocusing in EUV lithography", Proc. SPIE 6517, Emerging Lithographic Technologies XI, 65170X (15 March 2007); https://doi.org/10.1117/12.713244

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