Manufacturing implications for photonic crystal patterning using imprint lithography

Chris Jones; David Lentz; Gary Doyle; Mike Miller; Maha Ganapathisubramanian; Xiaoming Lu; Doug Resnick; Dwayne L. LaBrake

doi:10.1117/12.715220

13 February 2007 Manufacturing implications for photonic crystal patterning using imprint lithography

Chris Jones, David Lentz, Gary Doyle, Mike Miller, Maha Ganapathisubramanian, Xiaoming Lu, Doug Resnick, Dwayne L. LaBrake

Author Affiliations +

Proceedings Volume 6486, Light-Emitting Diodes: Research, Manufacturing, and Applications XI; 64860Q (2007) https://doi.org/10.1117/12.715220
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

The Step and Flash Imprint Lithography (S-FIL™) process is a nano-imprint lithography technique based on UV curable low viscosity liquids. S-FIL uses drop dispensing of UV curable liquids to pattern entire wafers with a single imprint. This approach allows for micro and nano-fabrication of devices with widely varying pattern densities and complicated structures over wafers with high nanotopography. Patterning of arbitrarily shaped sub-100 nm structures with nanotopography which is greater than 10&mgr;m is not obtainable using DUV stepper technology. Photonic crystal structures, wire grid polarizers and micro lenses are examples of optical components that can be formed using S-FIL technology imprinting on whole substrates. The authors have devised a beginning to end lithography process which includes: wafer preparation processes for imprint, a high throughput whole wafer step and repeat imprint process and dry etching processes for resists and hard mask patterning. The process is capable of patterning sub-100 nm hard masks on substrates where the nanotopography is in excess of 10&mgr;m across the substrate. The imprint process flow uses the Step and Flash Imprint Lithography Reverse (S-FIL/R) tone process which has been demonstrated to be robust at holding critical dimensions for a wide window of etch conditions, wafer topography and defects. The authors describe a photonic crystal patterning process from beginning to end with particular attention to etch selectivity, analysis of cross wafer critical dimensions and a survey of defect requirements for successful high yield imprint patterning.

Citation Download Citation

Chris Jones, David Lentz, Gary Doyle, Mike Miller, Maha Ganapathisubramanian, Xiaoming Lu, Doug Resnick, and Dwayne L. LaBrake "Manufacturing implications for photonic crystal patterning using imprint lithography", Proc. SPIE 6486, Light-Emitting Diodes: Research, Manufacturing, and Applications XI, 64860Q (13 February 2007); https://doi.org/10.1117/12.715220

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