Comprehensive study of reliability of InGaN-based laser diodes

L. Marona; M. Sarzynski; P. Wi?niewski; M. Leszczy?ski; P. Prystawko; I. Grzegory; T. Suski; S. Porowski; R. Czernecki; G. Kamler; A. Czerwinski; M. Pluska; J. Ratajczak; P. Perlin

doi:10.1117/12.699001

8 February 2007 Comprehensive study of reliability of InGaN-based laser diodes

L. Marona, M. Sarzynski, P. Wi?niewski, M. Leszczy?ski, P. Prystawko, I. Grzegory, T. Suski, S. Porowski, R. Czernecki, G. Kamler, A. Czerwinski, M. Pluska, J. Ratajczak, P. Perlin

Author Affiliations +

Proceedings Volume 6485, Novel In-Plane Semiconductor Lasers VI; 648504 (2007) https://doi.org/10.1117/12.699001
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

In this work we present the reliability study of InGaN violet laser diodes fabricated by metaloorganic vapor phase epitaxy on high pressure grown bulk GaN crystals. Our devices were tested both in cw and a pulse regime. We found out that the degradation rate of the laser diodes does not depend on the photon density (at least up to around 50 mW of an output optical power). We show also that the main factor influencing the degradation rate is an operation current density on which the degradation rate depends exponentially. Additionally, we reconfirm that the degradation follows the square root dependence between threshold current and time suggesting that the diffusion may be a main mechanism causing damage of diodes.

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L. Marona, M. Sarzynski, P. Wi?niewski, M. Leszczy?ski, P. Prystawko, I. Grzegory, T. Suski, S. Porowski, R. Czernecki, G. Kamler, A. Czerwinski, M. Pluska, J. Ratajczak, and P. Perlin "Comprehensive study of reliability of InGaN-based laser diodes", Proc. SPIE 6485, Novel In-Plane Semiconductor Lasers VI, 648504 (8 February 2007); https://doi.org/10.1117/12.699001

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