Investigations of surface defects on semiconductor fluorescence lifetime

Daniel A. Bender; Michael P. Hasselbeck; Mansoor Sheik-Bahae

doi:10.1117/12.709935

7 March 2007 Investigations of surface defects on semiconductor fluorescence lifetime

Daniel A. Bender, Michael P. Hasselbeck, Mansoor Sheik-Bahae

Proceedings Volume 6461, Laser Cooling of Solids; 646109 (2007) https://doi.org/10.1117/12.709935
Event: Lasers and Applications in Science and Engineering, 2007, San Jose, California, United States

Abstract

We investigate the role of surface defects on semiconductor fluorescence lifetime using near-field scanning optical microscopy (NSOM) and time correlated single photon counting (TCSPC). A conventional far-field microscope is used to excite a GaAs sample and subsequent fluorescence is collected with a fiber coupled near-field probe. With the application of custom fitting algorithms, we find fluorescence lifetimes in the vicinity of surface defects to be significantly reduced with respect to fluorescence lifetimes measured in defect free regions.

Citation Download Citation

Daniel A. Bender, Michael P. Hasselbeck, and Mansoor Sheik-Bahae "Investigations of surface defects on semiconductor fluorescence lifetime", Proc. SPIE 6461, Laser Cooling of Solids, 646109 (7 March 2007); https://doi.org/10.1117/12.709935

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