Monolithically stacked high-power diode laser bars in quasi-continuous-wave operation exceeding 500 W

M. Müller; M. Philippens; G. Grönninger; H. König; J. Moosburger; G. Herrmann; M. Reufer; J. Luft; M. Stoiber; D. Lorenzen

doi:10.1117/12.699827

7 February 2007 Monolithically stacked high-power diode laser bars in quasi-continuous-wave operation exceeding 500 W

M. Müller, M. Philippens, G. Grönninger, H. König, J. Moosburger, G. Herrmann, M. Reufer, J. Luft, M. Stoiber, D. Lorenzen

Author Affiliations +

Proceedings Volume 6456, High-Power Diode Laser Technology and Applications V; 64561B (2007) https://doi.org/10.1117/12.699827
Event: Lasers and Applications in Science and Engineering, 2007, San Jose, California, United States

Abstract

In this paper we report on quasi-continuous-wave (q-cw) operation of monolithically stacked laser diode bars. Monolithically stacked laser diode bars consist of more than one laser diode grown on top of each other. In between every two laser diodes a tunnel junction is included to ensure proper current injection to all lasers. In comparison to a standard laser operated at the same optical power level, the monolithic laser stack has a significantly reduced optical mirror load. Furthermore the required current is reduced drastically, which has positive consequences on both laser lifetime and diode driver costs. If one otherwise compares a monolithic integrated laser bar stack with a setup of three separate standard laser bars, the monolithic laser bar stack is characterized by very low costs per watt as well as high brilliance. By using monolithically stacked laser diode bars we were able to exceed an optical power of 500 W in q-cw mode and are moving to even higher output power levels. Typical wavelengths are in the range between 800 and 1000 nm.

Citation Download Citation

M. Müller, M. Philippens, G. Grönninger, H. König, J. Moosburger, G. Herrmann, M. Reufer, J. Luft, M. Stoiber, and D. Lorenzen "Monolithically stacked high-power diode laser bars in quasi-continuous-wave operation exceeding 500 W", Proc. SPIE 6456, High-Power Diode Laser Technology and Applications V, 64561B (7 February 2007); https://doi.org/10.1117/12.699827

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