Paper
6 October 2006 The testing of responding time delay of the hybrid integrated circuit of PIN photodiode
Author Affiliations +
Proceedings Volume 6352, Optoelectronic Materials and Devices; 63521R (2006) https://doi.org/10.1117/12.687772
Event: Asia-Pacific Optical Communications, 2006, Gwangju, South Korea
Abstract
The responding time delay characteristic of the detector of PIN photodiode is caused by the different intensity of the signal received by the detector. The responding time delay usually is less several tens nano-seconds. Aaccording to the principle of the responding time delay, the testing system is designed to measure the responding time delay. The test of responding time delay with different laser powers is carried on, and the result of the responding time delays is given.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rongguo Fu, Bengkang Chang, Yuansheng Qian, and YaFeng Qiu "The testing of responding time delay of the hybrid integrated circuit of PIN photodiode", Proc. SPIE 6352, Optoelectronic Materials and Devices, 63521R (6 October 2006); https://doi.org/10.1117/12.687772
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Pulsed laser operation

PIN photodiodes

Sensors

Integrated circuits

Signal detection

Laser range finders

Semiconductor lasers

RELATED CONTENT

Development of laser technology in Poland: 2018
Proceedings of SPIE (December 04 2018)
Test of 1.06-µm photo detector of PIN photodiode
Proceedings of SPIE (May 12 2004)
Concept and design of a multiple-function laser (MFL)
Proceedings of SPIE (October 26 1998)
Pulsed laser-Doppler flowmetry for monitoring deep perfusion
Proceedings of SPIE (October 24 2001)

Back to Top