Intracavity-contacted resonant cavity enhanced photodetectors based on VCSEL structure

Il-Sug Chung; Jin-Kyung Choi; Ki-Soo Chang; Kamal Alameh; Yong Tak Lee

doi:10.1117/12.691608

6 October 2006 Intracavity-contacted resonant cavity enhanced photodetectors based on VCSEL structure

Il-Sug Chung, Jin-Kyung Choi, Ki-Soo Chang, Kamal Alameh, Yong Tak Lee

Proceedings Volume 6352, Optoelectronic Materials and Devices; 63521L (2006) https://doi.org/10.1117/12.691608
Event: Asia-Pacific Optical Communications, 2006, Gwangju, South Korea

Abstract

Intracavity-contacted resonant cavity enhanced photodetectors (IC RCEPDs) have been fabricated for monolithic integration with IC VCSELs. A low parasitic capacitance of 0.39 pF and an extrinsic 3-dB bandwidth of 9 GHz are demonstrated by using coplanar metal contacts. Optimization issues on device and epi designs are discussed. The largest frequency saturation photocurrent below which the extrinsic 3-dB bandwidth exceeds 6.5 GHz is 4.2 μA.

Citation Download Citation

Il-Sug Chung, Jin-Kyung Choi, Ki-Soo Chang, Kamal Alameh, and Yong Tak Lee "Intracavity-contacted resonant cavity enhanced photodetectors based on VCSEL structure", Proc. SPIE 6352, Optoelectronic Materials and Devices, 63521L (6 October 2006); https://doi.org/10.1117/12.691608

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