Paper
6 July 2006 Electrically pumped InAs single quantum dot emitter
A. Lochmann, E. Stock, O. Schulz, F. Hopfer, D. Bimberg, V. A. Haisler, A. I. Toropov, A. K. Bakarov, A. K. Kalagin, M. Scholz, S. Büttner, O. Benson
Author Affiliations +
Proceedings Volume 6350, Workshop on Optical Components for Broadband Communication; 63500F (2006) https://doi.org/10.1117/12.692764
Event: Workshop on Optical Components for Broadband Communication, 2006, Stockholm, Sweden
Abstract
We report on a miniature solid state emitter structure, which allows electrical pumping of only one single InAs quantum dot (QD) grown in the Stranski-Krastanow mode. The emitter is based on a single layer of low density (~108 cm-2) QDs grown by Molecular Beam Epitaxy and a submicron AlOX current aperture defined by selective oxidation of high aluminium content AlGaAs layers. The device demonstrates strongly monochromatic polarized emission of the single QD exciton at subnanoampere current pumping. No other emission is observed across a spectral range of 500 nm, proving that indeed just one single QD is contributing. Correlation measurements of the emitted photons show a clear antibunching behavior.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Lochmann, E. Stock, O. Schulz, F. Hopfer, D. Bimberg, V. A. Haisler, A. I. Toropov, A. K. Bakarov, A. K. Kalagin, M. Scholz, S. Büttner, and O. Benson "Electrically pumped InAs single quantum dot emitter", Proc. SPIE 6350, Workshop on Optical Components for Broadband Communication, 63500F (6 July 2006); https://doi.org/10.1117/12.692764
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KEYWORDS
Excitons

Indium arsenide

Oxides

Quantum dots

Single photon

Aluminum

Photons

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