Optimization of development process using after develop inspection in mask manufacturing

Hyun Young Kim; Dae Ho Hwang; Sang Pyo Kim; Oscar Han; Ki Hun Park; Nam Wook Kim; David Kim

doi:10.1117/12.702033

20 October 2006 Optimization of development process using after develop inspection in mask manufacturing

Hyun Young Kim, Dae Ho Hwang, Sang Pyo Kim, Oscar Han, Ki Hun Park, Nam Wook Kim, David Kim

Proceedings Volume 6349, Photomask Technology 2006; 63493Q (2006) https://doi.org/10.1117/12.702033
Event: SPIE Photomask Technology, 2006, Monterey, California, United States

Abstract

As the design rule continues to shrink towards 65nm and beyond, the defect criteria is becoming ever more challenging. The pattern fidelity and reticle defects that were once considered as insignificant or nuisance are now migrating to yield-limiting. As a result, it is important to conduct After Develop Inspection (ADI) to identify where in the process the small contamination and particles originate from. The intent of this study is to identify the defect source by utilizing KLA-Tencor's SLF die-to-die reflected light mode and ADI algorithm for the post development resist layer inspection.

Citation Download Citation

Hyun Young Kim, Dae Ho Hwang, Sang Pyo Kim, Oscar Han, Ki Hun Park, Nam Wook Kim, and David Kim "Optimization of development process using after develop inspection in mask manufacturing", Proc. SPIE 6349, Photomask Technology 2006, 63493Q (20 October 2006); https://doi.org/10.1117/12.702033

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