Paper
20 August 1986 A New Lens For Submicron Lithography And Its Consequences For Wafer Stepper Design
J. Biesterbos, A. Bouwer, G. V. Engelen, G . V. D. Looij, J. V. D. Werf
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Abstract
The imaging properties of a prototype from the new generation of i-line, high numerical aperture projection lenses have been investigated. The production resolution of this submicron lens is 0.7 micron at a depth of focus of +/- 1.5 microns. The diameter of the image field is 14.1 mm. The curvature of the focal plane is about 1.5 microns between a position at the optical axis and a position at the edge of the image field. The lens has been incorporated in a wafer stepper. Improvements which have been carried out in order to meet the submicron requirements from the side of the stepper are the accuracy of the wafer positioning (3 sigma = 50 nm) and of reticle-to-wafer alignment ( 3 sigma = 60 nm ). Systems for correcting for the influence of variations of the atmospheric pressure have been incorporated.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Biesterbos, A. Bouwer, G. V. Engelen, G . V. D. Looij, and J. V. D. Werf "A New Lens For Submicron Lithography And Its Consequences For Wafer Stepper Design", Proc. SPIE 0633, Optical Microlithography V, (20 August 1986); https://doi.org/10.1117/12.963700
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CITATIONS
Cited by 2 scholarly publications and 8 patents.
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KEYWORDS
Semiconducting wafers

Reticles

Optical alignment

Optical lithography

Signal detection

Scanning electron microscopy

Image quality

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