Paper
29 August 2006 Avalanche-free tunnel-junction photodetectors with very high gain and responsivity
Jeong-S. Moon, Shuoqin Wang, Bin Q. Shi, Rajesh Rajaval, Danny Wong, Joel Schulman
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Abstract
We present a prototype photodetector in which the built-in "tunneling structure" serves as an internal gain mechanism for photon detection. Initial feasibility studies demonstrated that the new photon detector offers an optical responsivity as high as 3000 A/W peaked at λ=1.3 μm at less than 1 V bias applied. The measurements were carried out using a photospectrometer setup in a continuous mode at room-temperature. Very strong (> 1000) responsivity is also measured from visible to SWIR even with a simple optical coupling scheme that utilizes very thin absorber layers in the prototype devices. The dark current density is ~ 5×10-10 A/μm2 at the operating bias. Room-temperature NEP was calculated based on a shot noise measurement, yielding NEP of 4~ 5×10-15 W/Hz1/2 and D* of 2~3×1012 cmHz1/2/W, peaked at a bias of 0.3 V at a fixed wavelength of λ=1.3 μm.
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Jeong-S. Moon, Shuoqin Wang, Bin Q. Shi, Rajesh Rajaval, Danny Wong, and Joel Schulman "Avalanche-free tunnel-junction photodetectors with very high gain and responsivity", Proc. SPIE 6308, Photonics for Space Environments XI, 63080O (29 August 2006); https://doi.org/10.1117/12.678100
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KEYWORDS
Photodetectors

Sensors

Germanium

Indium gallium arsenide

Prototyping

Aluminum

Gallium

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