Radiation-induced structure modification in monocrystalline silicon under high-energy C6+ irradiation

T. S. Balashov; A. A. Golubev; M. A. Kozodaev; S. V. Rogozhkin; A. D. Fertman; V. I. Turtikov; A. G. Zaluzhnyi

doi:10.1117/12.677148

10 June 2006 Radiation-induced structure modification in monocrystalline silicon under high-energy C⁶⁺ irradiation

T. S. Balashov, A. A. Golubev, M. A. Kozodaev, S. V. Rogozhkin, A. D. Fertman, V. I. Turtikov, A. G. Zaluzhnyi

Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 626008 (2006) https://doi.org/10.1117/12.677148
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation

Abstract

This paper concerns surface morphology and structural modification in silicon after 1.2 GeV C⁶⁺ irradiation. A number of experimental techniques was used, including atomic force microscopy, x-ray photoelectron spectroscopy and x-ray diffraction studies. The formation of nanometer-sized hillocks on the surface was revealed. In the bulk of parallel-irradiated specimens amorphous regions formation was discovered.

Citation Download Citation

T. S. Balashov, A. A. Golubev, M. A. Kozodaev, S. V. Rogozhkin, A. D. Fertman, V. I. Turtikov, and A. G. Zaluzhnyi "Radiation-induced structure modification in monocrystalline silicon under high-energy C⁶⁺ irradiation", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 626008 (10 June 2006); https://doi.org/10.1117/12.677148

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