Paper
19 May 2006 Active two-terminal devices as sources at THz frequencies: concepts, performance, and trends
Heribert Eisele
Author Affiliations +
Abstract
The paper discusses and compares the concepts, performance potential, and most recent experimental results of both classical and novel active two-terminal for low-noise RF power generation at submillimeter-wave frequencies up to 1 THz. These devices use transit-time, transferred-electron, and quantum-mechanical effects (or a combination of them) to create a negative differential resistance at the frequency of interest. Examples of state-of-the-art results are output power levels of more than 3.5 mW at 300 GHz and more than 1.6 MW at 327 GHz from an InP Gunn device as well as more than 140 μW at 355 GHz from a GaAs tunnel-injection transit-time diode.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Heribert Eisele "Active two-terminal devices as sources at THz frequencies: concepts, performance, and trends", Proc. SPIE 6257, ICONO 2005: Nonlinear Laser Spectroscopy, High Precision Measurements, and Laser Biomedicine and Chemistry, 62570G (19 May 2006); https://doi.org/10.1117/12.678361
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Cited by 3 scholarly publications.
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KEYWORDS
Diodes

Oscillators

Gallium arsenide

Terahertz radiation

Heterojunctions

Superlattices

Waveguides

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