Paper
24 May 2006 Internal defect localization in 980 nm ridge waveguide lasers
L. Díaz, H. J. Eichler, K. Weich, A. Klehr, U. Zeimer
Author Affiliations +
Abstract
High power lasers emitting at 980 nm are essential for pumping sources of erbium-doped fiber amplifiers (EDFAs). These are used in longer distance telecommunications. Stability and reliability of the modules are two key characteristics. The present paper investigates 'sudden random failures' of double quantum-well 980 nm high power ridge waveguide lasers implemented in EDFAs. For the inspection of the external and internal status of the device we used optical spectrum modulation experiments, electroluminescence measurements, scanning electron microscopy and cathodoluminescence investigations. The localization of internal defects is the main point of this work. Two different 'sudden random failures' were found: catastrophical optical mirror damage (COMD) and internal dark line defect (DLD) formation.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. Díaz, H. J. Eichler, K. Weich, A. Klehr, and U. Zeimer "Internal defect localization in 980 nm ridge waveguide lasers", Proc. SPIE 6193, Reliability of Optical Fiber Components, Devices, Systems, and Networks III, 61930G (24 May 2006); https://doi.org/10.1117/12.662330
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Cited by 1 scholarly publication.
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KEYWORDS
Laser induced damage

Semiconductor lasers

Fourier transforms

Optical amplifiers

Waveguide lasers

Laser damage threshold

Electroluminescence

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