Paper
22 April 2006 Seebeck infrared photodetectors: an ultra wide dynamic range of design possibilities
Johan Stiens, Gennady Shkerdin, Vladimir Kotov, Werner Vandermeiren, Cathleen De Tandt, Gustaaf Borghs, Roger Vounckx
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Abstract
The theoretical background of Seebeck infrared detectors based on nonlinear free carrier absorption in doped semiconductors has been presented. The 3D-distribution of the electron and lattice temperatures created by the absorption of an optical beam with a cylindrical symmetry in layered structures was developed. Five different operation regimes of the detector are presented, showing that all beams form CW down to picoseconds can be detected. We will discuss how one can control the detectable power and intensity levels and the cross-talk in multi-pixel arrays by means of the doping concentration, geometry of the absorption region and pixellation format, the positioning of a heat sink, and micro-machining techniques. Experimental backing for the model will be given for the pulsed regime and the CW regime. We also demonstrate operation of the detector in the +1 kW power level.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Johan Stiens, Gennady Shkerdin, Vladimir Kotov, Werner Vandermeiren, Cathleen De Tandt, Gustaaf Borghs, and Roger Vounckx "Seebeck infrared photodetectors: an ultra wide dynamic range of design possibilities", Proc. SPIE 6189, Optical Sensing II, 61890Y (22 April 2006); https://doi.org/10.1117/12.662483
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Cited by 2 scholarly publications.
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KEYWORDS
Absorption

Sensors

Doping

Pulsed laser operation

Semiconductors

Gas lasers

Gallium arsenide

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