Patterning light emitting porous silicon using helium beam irradiation

E. J. Teo; M. B. H. Breese; A. A. Bettiol; F. Champeaux; D. J. Blackwood

doi:10.1117/12.662502

20 April 2006 Patterning light emitting porous silicon using helium beam irradiation

E. J. Teo, M. B. H. Breese, A. A. Bettiol, F. Champeaux, D. J. Blackwood

Proceedings Volume 6183, Integrated Optics, Silicon Photonics, and Photonic Integrated Circuits; 618312 (2006) https://doi.org/10.1117/12.662502
Event: SPIE Photonics Europe, 2006, Strasbourg, France

Abstract

High energy helium beam has been utilized to pattern silicon prior to electrochemical etching in hydrofluoric acid. Photoluminescence (PL) studies carried out on medium resistivity silicon showed that the PL wavelength of the irradiated regions is continuously red-shifted by up to 150 nm with increasing dose. On the lower resistivity silicon, the intensity is shown to increase by more than twenty times with dose. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) have been used to determine the surface morphology of the irradiated structure. This technique is potentially important for producing an integrated silicon based optoelectronic device.

Citation Download Citation

E. J. Teo, M. B. H. Breese, A. A. Bettiol, F. Champeaux, and D. J. Blackwood "Patterning light emitting porous silicon using helium beam irradiation", Proc. SPIE 6183, Integrated Optics, Silicon Photonics, and Photonic Integrated Circuits, 618312 (20 April 2006); https://doi.org/10.1117/12.662502

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