Application of CM0 resist model to OPC and verification

Yuri Granik; Nick Cobb; Dmitry Medvedev

doi:10.1117/12.656566

20 March 2006 Application of CM0 resist model to OPC and verification

Yuri Granik, Nick Cobb, Dmitry Medvedev

Proceedings Volume 6154, Optical Microlithography XIX; 61543E (2006) https://doi.org/10.1117/12.656566
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

We present calibration results for physically-based Compact Model Zero (CM0) used in OPC and OPC Verifications. The model sequentially solves equations for the exposure, baking, and development using 2D meshes and contour movements. CM0 can be used to explore next generation OPC techniques before CD calibration measurements are available, as well as an alternative to empirical compact models in routine OPC flows. Linearization of CM0 suggests modeling forms that are used in the CM1 model. CM1 is easier to calibrate because it is linear by the modeling coefficients and also includes modeling terms to account for long range loading effects.

Citation Download Citation

Yuri Granik, Nick Cobb, and Dmitry Medvedev "Application of CM0 resist model to OPC and verification", Proc. SPIE 6154, Optical Microlithography XIX, 61543E (20 March 2006); https://doi.org/10.1117/12.656566

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