Thin bilayer resists approach for 193nm and future photolithography

Yoshi Hishiro; Michael Hyatt

doi:10.1117/12.659630

29 March 2006 Thin bilayer resists approach for 193nm and future photolithography

Yoshi Hishiro, Michael Hyatt

Proceedings Volume 6153, Advances in Resist Technology and Processing XXIII; 61532W (2006) https://doi.org/10.1117/12.659630
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

Resist aspect ratio has always been an issue for lithographic processes. Smaller CD forces the use of thinner resist films, but dry etch needs a certain amount of thickness in the resist. Various techniques have been proposed and researched to overcome these single-layer resist limitations. Bilayer Si-containing resists are a technique of interest and a strong candidate to replace CVD processes. In this paper, we have characterized bilayer resists and their dry-develop processes, and sought possible uses for advanced lithography, especially by using a thin film (70nm-90nm). Bilayer resist dry-develop consists of a film shrink as in an exposure reaction with an early-stage resist surface oxidation. We discuss material requirements for this purpose and provide some after-dry-develop images with small CD.

Citation Download Citation

Yoshi Hishiro and Michael Hyatt "Thin bilayer resists approach for 193nm and future photolithography", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61532W (29 March 2006); https://doi.org/10.1117/12.659630

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