In-line monitoring of advanced copper CMP processes with picosecond ultrasonic metrology

Ming Hsun Hsieh; J. H. Yeh; Mingsheng Tsai; Chan Lon Yang; John Tan; Sean Patrick Leary

doi:10.1117/12.660205

24 March 2006 In-line monitoring of advanced copper CMP processes with picosecond ultrasonic metrology

Ming Hsun Hsieh, J. H. Yeh, Mingsheng Tsai, Chan Lon Yang, John Tan, Sean Patrick Leary

Proceedings Volume 6152, Metrology, Inspection, and Process Control for Microlithography XX; 61522C (2006) https://doi.org/10.1117/12.660205
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

Chemical mechanical planarization (CMP) is a challenging process step for manufacturers implementing dualdamascene architectures at the 65 nm technology node. The polishing rate can vary significantly from wafer-to-wafer, across a single wafer, and across a single die, depending on factors including electroplate profile, slurry chemistry, pad wear, and underlying structure. The process is further complicated by the introduction of low-k dielectrics that have significantly different mechanical properties than the harder SiO₂ they replace. Picosecond ultrasonics is a nondestructive, small-spot method that can be used for in-line on-product monitoring of metal processes including copper CMP. In this paper we will present gauge-capable picosecond ultrasonic results on copper erosion test structures that also demonstrate excellent correlation with electrical test measurements and TEM results on 65 nm products.

Citation Download Citation

Ming Hsun Hsieh, J. H. Yeh, Mingsheng Tsai, Chan Lon Yang, John Tan, and Sean Patrick Leary "In-line monitoring of advanced copper CMP processes with picosecond ultrasonic metrology", Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 61522C (24 March 2006); https://doi.org/10.1117/12.660205

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KEYWORDS

Copper

Picosecond phenomena

Ultrasonics

Semiconducting wafers

Chemical mechanical planarization

Polishing

Transmission electron microscopy

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