Paper
24 March 2006 Impact of line width roughness on device performance
G. F. Lorusso, L. H. A. Leunissen, C. Gustin, A. Mercha, M. Jurczak, H. M. Marchman, A. Azordegan
Author Affiliations +
Abstract
Although various approaches can be used to quantify linewidth roughness (LWR), it is essential to determine it with sufficient confidence. Statistical fluctuations inherent to the measurement process are making correlation between performance and LWR challenging. To reduce uncertainty, line width variations and LWR need to be monitored online in full automation by CDSEM. In this paper, we use this methodology to investigate the effect of LWR on electrical performance for various device applications. Our results quantify the impact of LWR by using matching techniques.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. F. Lorusso, L. H. A. Leunissen, C. Gustin, A. Mercha, M. Jurczak, H. M. Marchman, and A. Azordegan "Impact of line width roughness on device performance", Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 61520W (24 March 2006); https://doi.org/10.1117/12.656128
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CITATIONS
Cited by 14 scholarly publications.
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KEYWORDS
Line width roughness

Semiconducting wafers

Transistors

Critical dimension metrology

Electron beam lithography

Field effect transistors

Silicon

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