Ultimate fine-pitch resist patterning using the ASET-HINA

H. Oizumi; Y. Tanaka; F. Kumasaka; I. Nishiyama

doi:10.1117/12.656050

24 March 2006 Ultimate fine-pitch resist patterning using the ASET-HINA

H. Oizumi, Y. Tanaka, F. Kumasaka, I. Nishiyama

Proceedings Volume 6151, Emerging Lithographic Technologies X; 61512Q (2006) https://doi.org/10.1117/12.656050
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

This study had two goals. One was the evaluation of the ultimate fine-pitch patterning performance of the high-numerical-aperture (NA = 0.3) small-field EUV exposure tool (HINA). The other was the evaluation of the lithographic performance of conventional chemically-amplified (CA) polymeric resists and molecular resists using the HINA. Imaging experiments were carried out using coherent illumination (σ = 0.0). An EUV mask with a 60~80-nm-thick TaGeN absorber and a 10-nm-thick Cr buffer layer was fabricated to replicate dense sub-30-nm patterns. To determine the ultimate resolution of the HINA under three-ray interference in the sagittal direction, sub-30-nm-wide lines and spaces were delineated in a non-chemically-amplified resist. The smallest patterns delineated were dense 27-nm-wide lines, and the resolution obtained was nearly equal to the resolution limit of the HINA, which is the cut-off frequency of the optics in three-ray interference. A polymeric CA resist based on acetal-protected poly(hydroxystyrene) provided the best performance. It enabled the delineation of 28-nm-wide lines and spaces in a 70-nm-thick layer of resist at an exposure dose of 10 mJ/cm². A CA positive-tone resist based on low-molecular-weight amorphous polyphenol was also tested. It consists of a partially protected polyphenol, namely, 4,4'-methylenebis[2-[di(2,5-dimehtyl-4-hydroxyphenyl) methyl]phenol (25X-MBSA-P). It enabled the delineation of 30-nm-wide lines and spaces in a 40-nm-thick layer at an exposure dose of 10 mJ/cm². In addition, the sub-22-nm patterning of CA resists was performed under two-ray interference in the meridional direction.

Citation Download Citation

H. Oizumi, Y. Tanaka, F. Kumasaka, and I. Nishiyama "Ultimate fine-pitch resist patterning using the ASET-HINA", Proc. SPIE 6151, Emerging Lithographic Technologies X, 61512Q (24 March 2006); https://doi.org/10.1117/12.656050

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