Vertical GaN based light-emitting diodes on metal alloy substrate for solid state lighting application

T. Doan; C. Chu; C. Chen; W. Liu; J. Chu; J. Yeh; H. Chen; F. Fan; C. Tran

doi:10.1117/12.673987

22 February 2006 Vertical GaN based light-emitting diodes on metal alloy substrate for solid state lighting application

T. Doan, C. Chu, C. Chen, W. Liu, J. Chu, J. Yeh, H. Chen, F. Fan, C. Tran

Proceedings Volume 6134, Light-Emitting Diodes: Research, Manufacturing, and Applications X; 61340G (2006) https://doi.org/10.1117/12.673987
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

Vertical GaN based Light Emitting Diodes on metal alloy substrate were realized and characterized for solid state lighting application. An efficiency of more than 70 lumens/watt was achieved. In addition, these LEDs exhibit many advantages over those on sapphire under extreme operation conditions for general lighting application.

Citation Download Citation

T. Doan, C. Chu, C. Chen, W. Liu, J. Chu, J. Yeh, H. Chen, F. Fan, and C. Tran "Vertical GaN based light-emitting diodes on metal alloy substrate for solid state lighting application", Proc. SPIE 6134, Light-Emitting Diodes: Research, Manufacturing, and Applications X, 61340G (22 February 2006); https://doi.org/10.1117/12.673987

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