High performance 1.3µm quantum dot lasers on GaAs and Silicon

P. Bhattacharya; Z. Mi; J. Yang; S. Fathpour

doi:10.1117/12.641472

22 February 2006 High performance 1.3μm quantum dot lasers on GaAs and Silicon

P. Bhattacharya, Z. Mi, J. Yang, S. Fathpour

Proceedings Volume 6133, Novel In-Plane Semiconductor Lasers V; 61330U (2006) https://doi.org/10.1117/12.641472
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

We have investigated the molecular beam epitaxial growth and characteristics of self-organized In(Ga)As quantum dot lasers grown on GaAs and silicon. Utilizing the techniques of tunnel injection and acceptor-doping of quantum dots, we have achieved high performance 1.3 μm InAs quantum dot lasers on GaAs, which exhibit J_th=180 A/cm², T₀=∞, dg/dn≈1×10^-14 cm², f_-3dB=11 GHz, chirp of 0.1 Å and zero α-parameter. Utilizing thin (⩽ 2 μm) GaAs buffer layers and quantum dots as dislocation filters, we have demonstrated room-temperature operational In_0.5Ga_0.5As quantum dot lasers grown directly on silicon, which are characterized by relatively low threshold current (J_th ~ 900 A/cm²), high output power (> 150 mW), large characteristic temperature (T₀ = 244 K) and constant output slope efficiency (⩾ 0.3 W/A) in the temperature range of 5 to 95 °C.

Citation Download Citation

P. Bhattacharya, Z. Mi, J. Yang, and S. Fathpour "High performance 1.3μm quantum dot lasers on GaAs and Silicon", Proc. SPIE 6133, Novel In-Plane Semiconductor Lasers V, 61330U (22 February 2006); https://doi.org/10.1117/12.641472

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