Paper
22 February 2006 Characteristics of CW violet laser diodes grown by MBE
J. Heffernan, M. Kauer, S. E. Hooper, V. Bousquet, J. Windle, T. Smeeton, J. M. Barnes
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Abstract
In this paper we report on progress in the development of nitride laser diodes by molecular beam epitaxy (MBE). We review the steps taken to achieve continuous wave (CW) operation of 405nm lasers grown by MBE and evaluate the performance of such devices. The future potential of the growth method for lasers depends on the demonstration of long lived lasers with good operating characteristics such as high power output and low threshold current. We assess the challenges to achieving such performance in MBE-grown lasers and the progress in evaluating the key laser parameters in our devices.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Heffernan, M. Kauer, S. E. Hooper, V. Bousquet, J. Windle, T. Smeeton, and J. M. Barnes "Characteristics of CW violet laser diodes grown by MBE", Proc. SPIE 6133, Novel In-Plane Semiconductor Lasers V, 61330O (22 February 2006); https://doi.org/10.1117/12.646047
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KEYWORDS
Continuous wave operation

Semiconductor lasers

Gallium nitride

Laser damage threshold

Aluminum

Cladding

Quantum wells

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