Paper
7 July 1986 Scanning Laser Image Generation As A Diagnostic Tool For Semiconductor Materials And Circuits
D. L. Parker
Author Affiliations +
Proceedings Volume 0611, Laser Processing of Semiconductors & Hybrids; (1986) https://doi.org/10.1117/12.956414
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States
Abstract
This paper describes some of the potential applications of scanning laser generated images for use in material characterization, process control, and failure analysis in semi-conductor device manufacturing. Two applications are described in detail: CMOS latchup site identification and photoluminescence imaging of defects in gallium arsenide. Laser scanning is shown to be capable of identifying every site in a CMOS circuit which will sustain latchup under given bias conditions and identifying the relative sensitivities of each site. Photoluminescence imaging is shown to be capable of identifying the locations of dislocation clusters in gallium arsenide. These relatively inexpensive nondestructive tech-niques may prove to be powerful analytic tools in semiconductor device manufacturing.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. L. Parker "Scanning Laser Image Generation As A Diagnostic Tool For Semiconductor Materials And Circuits", Proc. SPIE 0611, Laser Processing of Semiconductors & Hybrids, (7 July 1986); https://doi.org/10.1117/12.956414
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KEYWORDS
Semiconducting wafers

Gallium arsenide

Semiconductors

Crystals

Semiconductor lasers

Luminescence

Signal detection

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