Vacuum annealing effects on properties of ITO films prepared by reactive low voltage ion plating technique

Ying Xu; Jinsong Gao; Xuanming Zheng; Xiaoyi Wang; Tongtong Wang; Hong Chen

doi:10.1117/12.666953

9 December 2005 Vacuum annealing effects on properties of ITO films prepared by reactive low voltage ion plating technique

Ying Xu, Jinsong Gao, Xuanming Zheng, Xiaoyi Wang, Tongtong Wang, Hong Chen

Author Affiliations +

Proceedings Volume 6024, ICO20: Optical Devices and Instruments; 602428 (2005) https://doi.org/10.1117/12.666953
Event: ICO20:Optical Devices and Instruments, 2005, Changchun, China

Abstract

With reactive low voltage ion plating technique, ITO (indium oxide doped with tin) films were deposited on glass substrates by using ITO pellet with a composition of 90 wt.% In₂O₃ and 10 wt.% SnO₂ without extra heating. The post annealing process was done in vacuum with different annealing temperature at 100, 200, 300 and 400°C for 2 hours, respectively. The effects of vacuum annealing on structural, optical and electrical properties of the ITO film deposited by RLVIP were studied in detail. The results showed that the crystalline of the film was improved with the higher temperature. The increase of the annealing temperature improved the infrared reflectivity from 30% to 80% over 8~14μm of the infrared atmosphere window, and a simultaneous variation in the optical transmission of the visible spectral region occurred. In addition, sheet resistance of ITO films had contrary changing trend with the IR reflectance, as well.

Citation Download Citation

Ying Xu, Jinsong Gao, Xuanming Zheng, Xiaoyi Wang, Tongtong Wang, and Hong Chen "Vacuum annealing effects on properties of ITO films prepared by reactive low voltage ion plating technique", Proc. SPIE 6024, ICO20: Optical Devices and Instruments, 602428 (9 December 2005); https://doi.org/10.1117/12.666953

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