Paper
8 November 2005 Mask rule check for inspection of leading-edge photomask
Author Affiliations +
Abstract
Leading-edge photomask, to which optical proximity correction (OPC) and dummy pattern are applied, almost always has complex patterns. Complex patterns such as "Narrow Space", "Thin Pattern", "Dummy Pattern", "Closely Face-to-Face Heads" of Posi Serifs, "Narrow Waisted Pattern" formed by a Nega Serif, "Jogs", etc. are a factor to complicate photomask manufacturing. Some the problems caused by complex patterns are increase in EB writing time, and decrease in performance of etching and cleaning process caused by Cr peeling and, above all, increase in the inspection time. Patterns whose complexity is beyond the resolution limit of inspection tool are detected as false defects. Therefore, it will greatly take time for the data investigation and re-inspection, etc. for assurance, and this causes congestion of half-finished products. To improve the process efficiency, it is necessary to locate false defects, so that the Do-Not-Inspection-Area(DNIR) or replaced with simpler patterns. In order to locate false defects, it is proposed to apply Mask Rule Check (MRC) to mask data for EB-writing.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wakahiko Sakata, Kiyoshi Yamasaki, Shogo Narukawa, and Naoya Hayashi "Mask rule check for inspection of leading-edge photomask", Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59924E (8 November 2005); https://doi.org/10.1117/12.633850
Lens.org Logo
CITATIONS
Cited by 1 patent.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Inspection

Photomasks

Defect detection

Manufacturing

Defect inspection

Data conversion

Optical proximity correction

Back to Top