Mask lithography assessment for 45 nm node technology

R. Scott Mackay; Henry Kamberian; Barry Rockwell

doi:10.1117/12.633550

7 November 2005 Mask lithography assessment for 45 nm node technology

R. Scott Mackay, Henry Kamberian, Barry Rockwell

Proceedings Volume 5992, 25th Annual BACUS Symposium on Photomask Technology; 59920S (2005) https://doi.org/10.1117/12.633550
Event: SPIE Photomask Technology, 2005, Monterey, California, United States

Abstract

Photomasks to support 45nm node circuit development will be needed by mid year 2007 to meet the most aggressive device development programs. Volume manufacturing of 45nm technology photomask, however, would not occur until 2-3 years later. Either case would require an advanced photomask lithography capability that can meet the 45nm node specifications. From a mask maker's perspective, a lithography tool platform that is flexible, that supports high resolution and can be ramped for throughput would be the best solution. In an effort to understand if a potential tool platform(s) will exist, Photronics performed characterization and assessment studies of all commercial mask pattern generator platforms. All mask pattern generator tools, including both e-beam and laser platforms, were evaluated for performance against 45nm node target specifications as defined by the International Technology Roadmap for Semiconductors.

Citation Download Citation

R. Scott Mackay, Henry Kamberian, and Barry Rockwell "Mask lithography assessment for 45 nm node technology", Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59920S (7 November 2005); https://doi.org/10.1117/12.633550

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