Channeling techniques to study strains and defects in heterostructures and multi quantum wells

A. P. Pathak; S. Dhamodaran; N. Sathish

doi:10.1117/12.639983

7 December 2006 Channeling techniques to study strains and defects in heterostructures and multi quantum wells

A. P. Pathak, S. Dhamodaran, N. Sathish

Proceedings Volume 5974, International Conference on Charged and Neutral Particles Channeling Phenomena; 59740C (2006) https://doi.org/10.1117/12.639983
Event: International Conference on Charged and Neutral Particles Channeling Phenomena, 2004, Rome, Italy

Abstract

The importance and advantages of heterostructures and Quantum Wells (QWs) in device technology has made research challenging due to lack of direct techniques for their characterization. Particularly the characterization of strain and defects at the interfaces has become important due to their dominance in the electrical and optical properties of materials and devices. RBSiC has been used to study variety of defects in single crystalline materials, for nearly four decades now. Channeling based experiments play a crucial role in giving depth information of strain and defects. Ion beams are used for both material characterizations as well as for modifications. Hence it is also possible to monitor the modifications online, which are discussed in detail. In the present work, Swift Heavy Ion (SHI) modification of III-V semiconductor heterostnictures and MQWs and the results of subsequent strain measurements by RBSiC in initially strained as well as lattice matched systems are discussed. We find that the compressive strain decreases due to SHI irradiation and a tensile strain is induced in an initially lattice matched system. The incident ion fluence dependence of strain modifications in the heterostructures will also be discussed. The use of high energy channeling for better sensitivity of strain measurements in low mismatch materials will be discussed in detail. Wherever possible, a comparison of results with those obtained by other techniques like HRXRD is given.

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A. P. Pathak, S. Dhamodaran, and N. Sathish "Channeling techniques to study strains and defects in heterostructures and multi quantum wells", Proc. SPIE 5974, International Conference on Charged and Neutral Particles Channeling Phenomena, 59740C (7 December 2006); https://doi.org/10.1117/12.639983

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KEYWORDS

Ions

Heterojunctions

Annealing

Ion beams

Quantum wells

Crystals

Indium

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