Far infrared and submillimeter range photosensitive devices based on Pb1-xSnxTe<In> films: results and perspectives

Alexander E. Klimov; Vladimir N. Shumsky

doi:10.1117/12.621603

14 October 2005 Far infrared and submillimeter range photosensitive devices based on Pb_1-xSn_xTe films: results and perspectives

Alexander E. Klimov, Vladimir N. Shumsky

Author Affiliations +

Proceedings Volume 5964, Detectors and Associated Signal Processing II; 59640C (2005) https://doi.org/10.1117/12.621603
Event: Optical Systems Design 2005, 2005, Jena, Germany

Abstract

Results of fabrication and parameters of infrared detectors based on In-doped lead-tin-telluride (LTT) films are presented. The films were grown using molecular beam epitaxy on BaF₂ substrates. The focal plane arrays operated at 7 to 15 K have shown better parameters than those known for impurity photoconductors. The typical average values of NEP were below 1,0×10^-18 W /Hz^1/2 at T=7K with cut-off λ_c = 20-25 μm. The operability of 2×128 focal plane arrays was over 90%. The model explaining the electrical and photoelectrical properties of the LTT films based on theories of space charge limited currents (SCLC) and ferroelectric phase transition (FEPT) has been developed. The calculations according to this model are in a good agreement with the experimental data. The laser-excited (λ=336.8 μ) photocurrent was observed, and prospects of usage of LTT-based devices as the submillimeter range detectors were discussed.

Citation Download Citation

Alexander E. Klimov and Vladimir N. Shumsky "Far infrared and submillimeter range photosensitive devices based on Pb_1-xSn_xTe films: results and perspectives", Proc. SPIE 5964, Detectors and Associated Signal Processing II, 59640C (14 October 2005); https://doi.org/10.1117/12.621603

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